Electronica: UK GaN device maker signs PV inverter deal - Electronics Weekly

2 years ago 42

CGD Neways astir   apt  GaN star  inverter

The collaboration has sprung from the European-funded GaNext project, connected which some companies worked.

“At Electronica, some connected the Neways booth and astatine CGD’s booth, visitors volition beryllium capable to spot a demo of a 3kW photovoltaic inverter jointly developed by the 2 companies,” according to CGD.

The transformer-less demo uses 8 CGD65A055S2 GaN transistors (650V 55mΩ) and delivers 1kW/litre, claims CGD. From 150 – 350Vdc input it delivers 230Vac. Switches is astatine 350kHz and ratio peaks astatine 99.22%.


CGD uses integrated circuit techniques to add gross thrust conditioning and existent sensing circuitry to its GaN transitor die. It was spun of the University of Cambridge successful 2016 by Florin Udrea and, present CEO, Giorgia Longobardi. The institution has effect money and Series A backstage investments, positive it has secured 4 projects funded by iUK, BEIS and EU (Penta).

Neways has 2,500 radical crossed the Netherlands, Germany, USA, China, Czech Republic and Slovakia that “enable solutions for electrical conveyance charging, electrical powerfulness trains, digitising wellness solutions, sustainable agriculture and producing microchips”, it said.

Neways Electronics : Electronica hallway A1 basal 306

CGD :Electronica hallway C3 basal 535

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