EPC Expands GaN Family with 150V Device for High-power Density Applications - Eetasia.com

2 years ago 42

Article By : Efficient Power Conversion

EPC has expanded its enactment of off-the-shelf GaN FETs successful thermally enhanced QFN packages with the instauration of the 150V EPC2308.

Efficient Power Conversion (EPC), a person successful enhancement-mode gallium nitride (eGaN) powerfulness FETs and ICs, has expanded its enactment of off-the-shelf GaN FETs successful thermally enhanced QFN packages with the instauration of the 150V EPC2308 designed for centrifugal thrust successful powerfulness tools and robots, precocious density DC-DC from/to 80V–100V for concern applications, synchronous rectification to 28V–54V for chargers, adaptors and powerfulness supplies, smartphones USB accelerated chargers, and successful star optimizers and microinverters.

The EPC2308 GaN FET offers a ace tiny RDS(on) of conscionable 4.9mΩ typical, unneurotic with precise tiny QG, QGD, and QOSS parameters for debased conduction and switching losses. The instrumentality features a thermally enhanced QFN bundle with footprint of conscionable 3 mm x 5 mm, offering an highly tiny solution size for the highest powerfulness density applications.

The bundle offers wettable flanks to simplify assembly and inspection and exposed apical and ultra-low thermal resistances to optimize thermal dissipation done heatsink for cooler operations.

The EPC2308 is footprint compatible with the antecedently released 100V, 1.8mΩ EPC2302 and the 100V, 3.8mΩ EPC2306.

“The EPC2308 combines the advantages of 150 V GaN with an casual to assemble and thermally enhanced QFN package,” said Alex Lidow, CEO and co-founder of EPC. “Designers tin usage our household of packaged GaN FETs to marque smaller and lighter value battery-operated BLDC centrifugal drives for robotics and powerfulness tools, higher ratio 80 V input DC-DC converters, and higher ratio USB chargers and powerfulness supply.”

The EPC90148 improvement committee is simply a fractional span featuring EPC2308 GaN FET. It is designed for 150V maximum instrumentality voltage and 12 A maximum output current. The intent of this committee is to simplify the valuation process to velocity clip to market. This 2x2in (50.8-by-50.8mm) committee is designed for optimal switching show and contains each captious components for casual evaluation.