X-Ray Device Alteration (XDA) Of Flip-Chip Packaged FinFET Devices - SemiEngineering

A caller method insubstantial titled “X-Ray Device Alteration Using a Scanning X-Ray Microscope” was published by researchers astatine NVIDIA and Sigray.

“Near Infra-Red (NIR) techniques specified arsenic Laser Voltage Probing/Imaging (LVP/I), Dynamic Laser Stimulation (DLS), and Photon Emission Microscopy (PEM) are indispensable for Electrical Fault Isolation/Electrical Failure Analysis (EFI/EFA) of silicon Integrated Circuit (IC) devices. However, upcoming IC architectures based connected Buried Power Rails (BPR) with Backside Power Delivery (BPD) networks volition greatly trim the usefulness of these techniques owed to the beingness of NIR-opaque layers that artifact entree to the transistor progressive layer. Alternative techniques susceptible of penetrating these opaque layers are truthful of large interest. Recent developments successful intense, focused X-ray microbeams for micro X-Ray Fluorescence (μXRF) microscopy unfastened the anticipation to utilizing X-rays for targeted and intentional instrumentality alteration,” states the paper.

Find the technical insubstantial here. Published October 2022.

William Lo, Puneet Gupta, Rakshith Venkatesh, Rudolf Schlangen, Howard Marks, Bruce Cory, Frances Su, Benjamin Stripe, Sylvia Lewis, Wenbing Yun; October 30–November 3, 2022. “X-Ray Device Alteration Using a Scanning X-Ray Microscope.” Proceedings of the ISTFA 2022. ISTFA 2022: Conference Proceedings from the 48th International Symposium for Testing and Failure Analysis. Pasadena, California, USA. (pp. pp. 153-162). ASM. https://doi.org/10.31399/asm.cp.istfa2022p0153.

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